New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1001-1004

DOI:

10.4028/www.scientific.net/MSF.389-393.1001

Citation:

H.Ö. Ólafsson et al., "New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures", Materials Science Forum, Vols. 389-393, pp. 1001-1004, 2002

Online since:

April 2002

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$35.00

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