Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

131-134

DOI:

10.4028/www.scientific.net/MSF.389-393.131

Citation:

T. L. Straubinger et al., "Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method", Materials Science Forum, Vols. 389-393, pp. 131-134, 2002

Online since:

April 2002

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$35.00

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