High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

179-182

DOI:

10.4028/www.scientific.net/MSF.389-393.179

Citation:

K. Masahara et al., "High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor", Materials Science Forum, Vols. 389-393, pp. 179-182, 2002

Online since:

April 2002

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$35.00

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