Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

191-194

Citation:

J. Zhang et al., "Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation", Materials Science Forum, Vols. 389-393, pp. 191-194, 2002

Online since:

April 2002

Export:

Price:

$38.00