Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

195-198

Citation:

K. Kojima et al., "Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction", Materials Science Forum, Vols. 389-393, pp. 195-198, 2002

Online since:

April 2002

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$38.00

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