Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

223-226

DOI:

10.4028/www.scientific.net/MSF.389-393.223

Citation:

M. Pons et al., "Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition", Materials Science Forum, Vols. 389-393, pp. 223-226, 2002

Online since:

April 2002

Export:

Price:

$35.00

In order to see related information, you need to Login.