Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

489-492

DOI:

10.4028/www.scientific.net/MSF.389-393.489

Citation:

A. Kawasuso et al., "Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy", Materials Science Forum, Vols. 389-393, pp. 489-492, 2002

Online since:

April 2002

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