Vacancy Defects in As-Polished and in High-Fluence H+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

493-496

DOI:

10.4028/www.scientific.net/MSF.389-393.493

Citation:

M. F. Barthe et al., "Vacancy Defects in As-Polished and in High-Fluence H+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy", Materials Science Forum, Vols. 389-393, pp. 493-496, 2002

Online since:

April 2002

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