'Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

91-94

DOI:

10.4028/www.scientific.net/MSF.389-393.91

Citation:

P. J. Wellmann et al., "'Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging", Materials Science Forum, Vols. 389-393, pp. 91-94, 2002

Online since:

April 2002

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$35.00

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