Silicon Carbide and Related Materials 2001
Wide-bandgap semiconductors such as silicon carbide (SiC) and group-III Nitrides have attracted increasing attention as favored materials short-listed for use in new electronic devices; especially those destined for high-power, high-frequency and/or high-temperature applications, as well as short-wavelength light-emitters. This two-volume set contains >illustrated transcripts of papers presented at the International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001), held in the Fall of 2001 at Tsukuba, Japan. This timely conference was held in the very first year of the 21st century; an era in which SiC devices are going to find a real market. More than 500 contributors; both academic scientists and device engineers, from 20 countries, discussed and exchanged ideas extensively during the five days of the conference.
These volumes contain 351 papers, 20 of which were invited. The principal topics are organized under the chapter headings: 1) surveys, 2) SiC bulk growth, 3) SiC epitaxial growth (homoepitaxy and heteroepitaxy), 4) physical properties of SiC (structure, defects, optical and electrical properties, surfaces and interfaces, and nanostructures), 5) processing of SiC (implantation, contacts, oxides), 6) SiC devices (diodes, power transistors, high-frequency devices, and sensors), and 7) III-Nitrides (growth, characterization, and devices). The papers reflect the stimulating atmosphere of the conference, and should provide many lines of enquiry for those working, or intending to work, in this field.