4H-SiC Epitaxial Growth for High-Power Devices

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

131-136

DOI:

10.4028/www.scientific.net/MSF.433-436.131

Citation:

H. Tsuchida et al., "4H-SiC Epitaxial Growth for High-Power Devices", Materials Science Forum, Vols. 433-436, pp. 131-136, 2003

Online since:

September 2003

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$35.00

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