Nitrogen Delta Doping in 4H-SiC Epilayers

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

153-156

Citation:

A. Henry et al., "Nitrogen Delta Doping in 4H-SiC Epilayers", Materials Science Forum, Vols. 433-436, pp. 153-156, 2003

Online since:

September 2003

Export:

Price:

$38.00

[1] T. Yokogawa, K. Takahashi, T. Uenoyama, O. Kusumoto, M. Uchida and M. Kitabatake, J. Appl Phys. 89 (2001), p.1794.

[2] S. Karlsson, C. Adås, A. Konstantinov and M.K. Linnarsson, Mat. Sc. For. Vol. 353-356 (2001), p.563.

[3] O. Kordina, C. Hallin, A. Henry, J. P. Bergman, I. Ivanov, A. Ellison, N. T. Son, and E. Janzén; Phys. Status Solidi B 202 (1997), p.321.

[4] EpigressAB.

[5] C. Hallin, F. Owman, P. Mårtensson, A. Ellison, A.O. Konstantinov, and E. Janzén; J. Cryst. Growth 181 (1997), p.241.

[6] A. Henry, A. Ellison, U. Forsberg, B. Magnusson, G. Pozina, and E. Janzén, Mat. Sc. For. Vol. 389-393 (2002), p.593.

[7] M. Kushibe, Y. Ishida, H. Okumura, T. Takahashi, K. Masahara, T. Ohno, T. Suzuki, T. Tanaka, S. Yoshida, and K. Arai, Mat. Sc. For. Vol. 338-342 (2000), p-169. Fig. 4 : Growth rate as a function of the growth time evaluated from SIMS analysis.

DOI: https://doi.org/10.4028/www.scientific.net/msf.338-342.169

Fetching data from Crossref.
This may take some time to load.