Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers


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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén




M. Syväjärvi et al., "Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers", Materials Science Forum, Vols. 433-436, pp. 169-172, 2003

Online since:

September 2003




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