Growth of High Quality p-Type 4H-SiC Substrates by HTCVD

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

21-24

DOI:

10.4028/www.scientific.net/MSF.433-436.21

Citation:

B. Sundqvist et al., "Growth of High Quality p-Type 4H-SiC Substrates by HTCVD", Materials Science Forum, Vols. 433-436, pp. 21-24, 2003

Online since:

September 2003

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$35.00

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