Growth of High Quality p-Type 4H-SiC Substrates by HTCVD

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

21-24

Citation:

B. Sundqvist et al., "Growth of High Quality p-Type 4H-SiC Substrates by HTCVD", Materials Science Forum, Vols. 433-436, pp. 21-24, 2003

Online since:

September 2003

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[1] A. Ellison, B. Magnusson, C. Hemmingsson, W. Magnusson, T. Iakimov, L. Storasta, A. Henry, N. Henelius and E. Janzén, Mat. Res. Soc. Symp. Proc. 640 (2001).

DOI: https://doi.org/10.1557/proc-640-h1.2

[2] St.G. Müller, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, H. McD. Hobgood, J. R Jenny, R. Leonard, D. Malta, A. Powell, V.F. Tsvetkov, S. Allen, J. Palmour and C.H. Carter Jr., High Quality Substrates for Semiconductor Devices: From Research to Industrial Production, Mat. Sci. Forum 389-393 (2002).

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.23

[3] N. Schulze, J. Gajowski, K. Semmelroth, M. Laube and G. Pensl, Mater. Sci. Forum 353-356 (2001) 45-48.

DOI: https://doi.org/10.4028/www.scientific.net/msf.353-356.45

[4] T.L. Straubinger, M. Bickermann, M. Rasp, R. Weingärtner, P.J. Wellmann and A. Winnacker, Mater. Sci. Forum 389-393 (2002) pp.131-134.

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.131

[5] http: /www. cree. com/ftp/pub/sicctlg_read_new. pdf, 2002-08-23.

[6] O. Kordina, C. Hallin, A. Henry, J.P. Bergman, I. Ivanov, A. Ellison, N.T. Son and E. Janzén, Phys. Stat. Sol. (b) 202 (1997), 321.

[7] J.P. Bergman, O. Kordina and E. Janzén, Phys. Stat. Sol. (a) 162 (1997).