Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

265-268

Citation:

E. Pernot et al., "Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging", Materials Science Forum, Vols. 433-436, pp. 265-268, 2003

Online since:

September 2003

Export:

Price:

$38.00

[1] R.C. Glass, D. Hensall, V.F. Tsveskov, C.H. Carter Jr; MRS Bull. 22, (1997), p.30.

[2] M. Anikin, O. Chaix, E. Pernot, B. Pelissier, M. Pons, A. Pish, C. Berard, P. Grosse , C. Faure, Y. Grange, G. Basset, C. Moulin, R. Madar, Mat. Sci. Forum 338-342 (2000), p.13.

DOI: https://doi.org/10.4028/www.scientific.net/msf.338-342.13

[3] S. Ha, N.T. Nuhter, M. De Graef, G.S. Rohrer, M. Skowronski, Mat. Sci. Forum, 338-342 (2000) p.477.

[4] E. Pernot, P. Pernot-Rejmánková, M. Anikin, B. Pelissier, C. Moulin, R. Madar; J. Phys. D: Appl. Phys. 34 2001) p.136.

DOI: https://doi.org/10.1088/0022-3727/34/10a/328

[5] X. R. Huang, M. Dudley, W. M. Vetter, W. Huang, W. Si, C.H. Carter Jr, J. Appl. Cryst 32 (1999), p.516.

[6] L. masarotto, J.M. bluet, M. Brenguer, P. Girard, G. Guillot; Mat. Sci. Forum, 353-356, (2001) p.393.

[7] H. Harima, T. Hosoda, S. Nakashima, Mat. Sci. Forum, 338-342, (2000) p.603. Acknowledgements : The authors gratefully acknowledge the team of the ID19 beam line of ESRF.

Fetching data from Crossref.
This may take some time to load.