Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

281-284

Citation:

R. Yakimova et al., "Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers", Materials Science Forum, Vols. 433-436, pp. 281-284, 2003

Online since:

September 2003

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[1] P.G. Neudeck, W. Huang and M. Dudley, Solid State Electr. 42 (1998), p.2157.

[2] J.P. Bergman, H. Lendenmann, P.Å. Nilsson, U. Lindefelt and P. Skytt, Mat. Sci. Forum Vol. 353-356 (2001), p.299.

[3] K. Nakayama, Y. Miyanagi, H. Shiomi, S. Nishino, T. Kimoto and H. Matsunami, Mat. Sci. Forum Vol. 389-393 (2002), p.123.

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.123

[4] R. Yakimova, H. Jacobson, M. Syväjärvi, A. Kakanakova-Georgieva, T. Iakimov, C. Virojanadara, L.I. Johansson and E. Janzén, Mat. Sci. Forum Vol. 389-393 (2002), p.283.

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.283

[5] H. Jacobson, J. Birch, A. Henry, C. Hallin, R. Yakimova, E. Janzén, submitted ECSCRM'02, (2002).

[6] L. Rowland, Workshop on Challenges in Semi-insulating Nitrides and SiC, July 14-18, 2002, Iceland, Abstract Book, p.35.