Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation

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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

29-32

Citation:

E.N. Mokhov et al., "Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation", Materials Science Forum, Vols. 433-436, pp. 29-32, 2003

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September 2003

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[1] Yu.A. Vodakov, M.G. Ramm, E.N. Mokhov, A.D. Roenkov, Yu.N. Makarov, S. Yu. Karpov, M.S. Ramm, and H. Helava: US Patent 6, 428, 621 (2002).

DOI: https://doi.org/10.4028/www.scientific.net/msf.433-436.29

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DOI: https://doi.org/10.4028/www.scientific.net/msf.353-356.57

[3] S. Yu. Karpov, A.V. Kulik, I.A. Zhmakin, Yu.N. Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, and Yu.A. Vodakov: J. Cryst. Growth 211 (2000) p.347.

DOI: https://doi.org/10.1016/s0022-0248(99)00787-3

[4] Yu.A. Vodakov, A.D. Roenkov, M.G. Ramm, E.N. Mokhov, and Yu.N. Makarov: Phys. Stat. Sol. (b) 202 (1997) p.177. 2 mm2 mm Fig. 6. Back-reflection X-ray topograph, of the wafer shown in Fig. 5 (CuKα radiation, )10. 110( - reflection).