Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC


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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén




M.-L. David et al., "Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC", Materials Science Forum, Vols. 433-436, pp. 371-374, 2003

Online since:

September 2003




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