Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

455-458

Citation:

L. Scaltrito et al., "Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes", Materials Science Forum, Vols. 433-436, pp. 455-458, 2003

Online since:

September 2003

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