Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters


Article Preview



Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén




I. Pintilie et al., "Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters", Materials Science Forum, Vols. 433-436, pp. 463-466, 2003

Online since:

September 2003




[1] T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner and N. Nordell: phys. stat. sol. (a) 162 (1997), p.199.


[2] J. P. Doyle, M. K. Linnarsson, P. Pellegrino, N. Keskitalo, B. G. Svensson, A. Schöner, N. Nordell and J. L. Lindström: J. Appl. Phys. 84 (1998), p.1354.

[3] A. Kawasuso, F. Redman, R. Krause-Rehberg, M. Weidner, T. Frank, G. Pensl, P. Sperr, W. Triftshäuser and H. Itoh: Appl. Phys. Lett. 79 (2001), p.3950.


[4] K. Fujihira, T. Kimoto and H. Matsunami: Appl. Phys. Lett. 80 (2002), p.1586.

[5] T. Kimoto, S. Nakazawa, K. Hashimoto and H. Matsunami: Appl. Phys. Lett. 79 (2001), p.2761.

[6] C. Hemmingsson, N. T. Son, A. Ellison, J. Zhang and E. Janzen: Phys. Rev. B 58 (1998), p. R10 119; 59 (1999), p.7768 (E).


[7] D. J. Larkin, P. G. Neudeck, J. A. Powell and L. G. Matus: Appl. Phys. Lett. 65 (1994), p.1659.

[8] J. Zhang, A. Ellison, A. Henry, M. K. Linnarson and E. Janzen: J. Cryst. Growth 226 (2001), p.267.

[9] G. Wagner, B. Thomas, J. Doerschel, J. Dolle and K. Irmscher: J. Electron. Mater. 30 (2001), p.207.

[10] D. V. Lang: in Thermally Stimulated Relaxation in Solids, edited by P. Bräunlich, Chap. 3, pp.93-128 (Springer, Berlin, 1979).

[11] L. Torpo, M. Marlo, T.E.M. Staab and R.M. Nieminen: J. Phys: Condens. Matter 13 (2001), p.6203.