Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

463-466

DOI:

10.4028/www.scientific.net/MSF.433-436.463

Citation:

I. Pintilie et al., "Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters", Materials Science Forum, Vols. 433-436, pp. 463-466, 2003

Online since:

September 2003

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$35.00

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