EPR Studies of Interface Defects in n-Type 6H-SiC/SiO2 Using Porous SiC

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

495-498

DOI:

10.4028/www.scientific.net/MSF.433-436.495

Citation:

H. J. von Bardeleben et al., "EPR Studies of Interface Defects in n-Type 6H-SiC/SiO2 Using Porous SiC", Materials Science Forum, Vols. 433-436, pp. 495-498, 2003

Online since:

September 2003

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$35.00

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