Electronic Properties of Stacking Faults in 15R-SiC


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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén




H. Iwata et al., "Electronic Properties of Stacking Faults in 15R-SiC", Materials Science Forum, Vols. 433-436, pp. 531-534, 2003

Online since:

September 2003




[1] H. Lendenmann, F. Dahlquist, N. Johansson, R. Söderholm, P. Å. Nilsson, J. P. Bergman, and P. Skytt, Mater. Sci. Forum 353-356 (2000), p.727.

DOI: https://doi.org/10.4028/www.scientific.net/msf.353-356.727

[2] J. P. Bergman, H. Lendenmann, P. Å. Nilsson, U. Lindefelt, and P. Skytt, Mater. Sci. Forum 353-356 (2000), p.299.

[3] See the abstract for the International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM'01), p.36.

[4] H. Iwata, U. Lindefelt, S. Öberg, and P. R. Briddon, Mater. Sci. Forum 389-393 (2002), p.529; Phys. Rev. B 65 (2002), p.033203; J. Phys.: Condens. Matter 14 (2002), p.12733.

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.529

[5] U. Lindefelt, H. Iwata, S. Öberg, and P. R. Briddon, submitted to Phys. Rev. B.

[6] M. S. Miao, S. Limpijumnong, and W. Lambrecht, Appl. Phys. Lett. 79 (2001), p.4360.

[7] See a series of contributions to the ICSCRM'01: J. P. Bergman, H. Jakobsson, L. Storasta, F. H. C. Carlsson, B. Magnusson, S. Sridhara, G. Pozina, H. Lendenmann, and E. Janzén, Mater. Sci. Forum 389-393 (2002).

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.9

[8] H. Iwata, U. Lindefelt, S. Öberg, and P. R. Briddon, Mater. Sci. Forum 389-393 (2002), p.533; J. Appl. Phys. (2003), in press.

[9] H. Iwata, U. Lindefelt, S. Öberg, and P. R. Briddon, Mater. Sci. Forum 389-393 (2002), p.439.

[10] K. Maeda, K. Suzuki, S. Fujita, M. Ichihara, and S. Hyodo, Phil. Mag. A 57 (1988), p.573.

[11] M. H. Hong, A. V. Samant, and P. Pirouz, Phil. Mag. A 80 (2000), p.919.

[12] S. G. Sridhara, F. H. C. Carlsson, J. P. Bergman, and E. Janzén, Appl. Phys. Lett. 79 (2001), p.3944.

[13] A. Galeckas, J. Linnros, B. Breitholtz, and H. Bleichner, J. Appl. Phys. 90 (2001), p.980.

[14] J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, and H. Lendenmann, Appl. Phys. Lett. 80 (2002), p.749.

[15] R. S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, and L. J. Brillson, Appl. Phys. Lett. 79 (2002), p.3056.

DOI: https://doi.org/10.1063/1.1415347

[16] J. Q. Liu, H. J. Chung, T. Kuhr, Q. Li, and M. Skowronski, Appl. Phys. Lett. 80 (2002), p.2111.

[17] P. O. Å. Persson, L. Hultman, H. Jacobson, J. P. Bergman, E. Janzén, J. M. Molina-Aldareguia, W. J. Clegg, and T. Tuomi, Appl. Phys. Lett. 80 (2002), p.4852.

DOI: https://doi.org/10.1063/1.1487904

[18] H. Jacobson, J. Birch, R. Yakimova, M. Syväjärvi, J. P. Bergman, A. Ellison, T. Tuomi, and E. Janzén. J. Appl. Phys. 91 (2002), p.6354.

[19] S. Ha, M. Skowronski, W. M. Vetter, and M. Dudley, J. Appl. Phys. 92 (2002) p.778.

[20] A. Galeckas, J. Linnros, and P. Pirouz, Appl. Phys. Lett. 81 (2002), p.883.

[21] G. Wellenhofer and U. Rossler, Solid State Commun. 96 (1995), p.1995; Phys. Status. Solidi. B 202 (1997), p.107.

[22] R. Schorner, P. Friedrichs, D. Peters, and D. Stephani, IEEE Electr. Device Lett. 20 (1999). p.241.

[22] H. Yano, T. Kimoto, H. Matsunami, M. Bassler, and G. Pensl, Mater. Sci. Forum 338-343 (2000), p.1109.

[23] N. Schulze, D. Barrett, and G. Pensl, Phys. Status. Solidi. A 178 (2000), p.645.

[24] T. Nishiguchi, T. Shimizu, M. Sasaki, S. Ohshima, and S. Nishino, Mater. Sci. Forum 353 (2000), p.69.

[25] M. H. Hong, P. Pirouz, J. Chung, S. Y. Yoon, J. L. Demenet, T. Nishiguchi, and S. Nishino, Phil. Mag. Lett. 81 (2001), p.823.

[26] T. Nishiguchi, Y. Masuda, S. Ohshima, and S. Nishino, J. Cryst. Growth 237 (2002), p.1239.

[27] C. Cheng, R. J. Needs and V. Heine, J. Phys. C 21 (1988), p.1049.

[28] F. Bechstedt and P. Käckell, Phys. Rev. Lett. 75 (1995), p.2180.

[29] A. Qteish, V. Heine, and R. J. Needs, Phys. Rev. B 45 (1992), p.6534; Phys. Rev. B 45 (1992), p.6376.

[30] A. Fissel, U. Kaiser, B. Schröter, W. Richter, and F. Bechstedt, Appl. Surf. Sci. 184 (2001), p.37.