A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface


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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén




H.Ö. Ólafsson et al., "A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface", Materials Science Forum, Vols. 433-436, pp. 547-550, 2003

Online since:

September 2003




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DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.1001

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