Effects of Initial Nitridation on the Characteristics of SiC-SiO2 Interfaces


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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén




K.Y. Cheong et al., "Effects of Initial Nitridation on the Characteristics of SiC-SiO2 Interfaces", Materials Science Forum, Vols. 433-436, pp. 583-586, 2003

Online since:

September 2003




[1] M.A. Capano and R.J. Trew, MRS Bulletin, March (1997), p.19.

[2] H. Linewih, S. Dimitrijev, C.E. Weitzel and H.B. Harrison, IEEE Trans. Electron Dev. Vol. 48 (2001), p.1711.

[3] J.A. Cooper, Jr., M.R. Melloch, R. Singh, A. Agarwal and J.W. Palmour, IEEE Trans Electron Dev. Vol. 49 (2002), p.658.

[4] S. Dimitrijev, K.Y. Cheong, J. Han and H.B. Harrison, Appl. Phys. Lett. Vol. 80 (2002), p.3421.

[5] K.Y. Cheong and S. Dimitrijev, IEEE Electron Dev. Lett. Vol. 23 (2002), p.404.

[6] K. Fukuda, S. Suzuki, J. Senzaki, R. Kosugi, K. Nagai, T. Sekigawa, H. Okushi, S. Yoshidsa, T. Tanaka and K. Arai, Mat. Sci. Forum Vol. 338-342 (2000), p.1283.

DOI: https://doi.org/10.4028/www.scientific.net/msf.338-342.1283

[7] S. Dimitrijev, H. -F. Li, H.B. Harrison and D. Sweatman, IEEE Electron Dev. Lett. Vol. 18 (1997), p.175.

[8] J.N. Shenoy, G.L. Chindalore, M.R. Melloch, J.A. Cooper Jr, J.W. Palmour and K.G. Irvine, J. Electron. Mater. Vol. 24 (1995), p.303.

[9] P. Jamet and S. Dimitrijev, Appl. Phys. Lett. Vol. 79 (2001), p.323.

[10] H. -F. Li, S. Dimitrijev, D. Sweatman, H.B. Harrison, P. Tanner and B. Feil, J. Appl. Phys. Vol. 86 (1999), p.4316.

[11] S. Dimitrijev, P. Tanner and H.B. Harrison, Microelectronics Reliab. Vol. 39 (1999), p.441.

[12] D.K. Schroder: Semiconductor material and device characterization (John Wiley & Sons, New York 1998), pp.386-387.