Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

617-620

DOI:

10.4028/www.scientific.net/MSF.433-436.617

Citation:

W. Bahng et al., "Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC", Materials Science Forum, Vols. 433-436, pp. 617-620, 2003

Online since:

September 2003

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$35.00

[1] A. Ohi, T. Ohshima, M. Yohsikawa, K. K. Lee, M. Iwami and H. Itoh, Mater. Sci. Forum 389-393, 831 (2002).

[2] J. Senzaki, S. Harada, R. Kosugi, S. Suzuki. K. Fukuda and K. Arai, Mater. Sci. Forum 389-393, 795 (2002).

[3] W. Bahng, N. K. Kim, S. C. Kim, G. H. Song and E. D. Kim, Mater. Sci. Forum 389-393, 863 (2002).

[4] C. Thomas C. Taylor, J. Griffin, W. L. Rose, M. G. Spencer, M. Capano, S. Rendakova and K. Kornegay, Mat. Res. Soc. Symp. Proc. 572, 45 (1999).

DOI: 10.1557/proc-572-45

[5] T. Troffer, M. Schadt, T. Frank, H. Itoh, G. Pensl, J. Heindl, H. P. Strunk and M. Maier, phys. stat. sol. (a) 162, 277 (1997).

DOI: 10.1002/1521-396x(199707)162:1<277::aid-pssa277>3.0.co;2-c

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