Electrical Characterization of Ion-Implanted n+/p 6H-SiC Diodes

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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

621-624

Citation:

A. Poggi et al., "Electrical Characterization of Ion-Implanted n+/p 6H-SiC Diodes", Materials Science Forum, Vols. 433-436, pp. 621-624, 2003

Online since:

September 2003

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[1] D.T. Morisette and J.A. Cooper, Jr: Mater. Sci. Forum Vol. 389-393 (2002), p.1133.

[2] A. Syrkin, V. Dmitriev, R. Yakimova, A. Henry and E. Janzén: Mat. Sci. Forum Vol. 389-393 (2002), p.1173.

[3] J.B. Tucker, M.V. Rao, N.A. Papanicolaou, J. Mittereder, A. Elasser, A.W. Clock, M. Ghezzo, O.W. Holland and K.A. Jones: IEEE Trans. Electron Devices, Vol. 48 (2001), p.2665.

DOI: https://doi.org/10.1109/16.974687

[4] M. Lazar, L. Ottaviani, M.L. Locatelli, C. Raynaud, D. Planson, E. Morvan, P. Godignon, W. Skorupa and J.P. Chante: Mat. Sci. Forum Vol. 353-356 (2001), p.571.

DOI: https://doi.org/10.4028/www.scientific.net/msf.353-356.571

[5] D. Aberg, A. Hallén, P. Pellegrino and B.G. Svensson: Appl. Phys. Lett. Vol. 78(2001), p.2908.

[6] A. Poggi, R. Nipoti, G.C. Cardinali, F. Moscatelli: submitted to Appl. Phys. Lett.

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