High-Sensitivity Ion Beam Analytical Method for Studying Ion-Implanted SiC

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

625-628

Citation:

G. Battistig et al., "High-Sensitivity Ion Beam Analytical Method for Studying Ion-Implanted SiC", Materials Science Forum, Vols. 433-436, pp. 625-628, 2003

Online since:

September 2003

Export:

Price:

$38.00

[1] Z. Zolnai, N.Q. Khánh, E. Szilágyi, E. Kótai, A. Ster, M. Posselt, T. Lohner and J. Gyulai, Diamond and Related Materials 11 (2002) p.1239.

DOI: https://doi.org/10.1016/s0925-9635(02)00007-9

[2] A.F. Gurbich, Nucl. Instr. Methods B161-163 (2000) p.125.

[3] G. Amsel, E. d'Artemare and E. Girard, Nucl. Instr. and Methods 205 (1983) p.5.

[4] E. Kótai: Nuclear Instruments and Methods in Physics Research B 85 (1994) p.588.

[5] Y. Feng, Z. Zhou, C. Zhou, G. Zhao, Nucl. Instr. and Meth. B 86 (1994) p.225.

[6] Leung et al., (1972).

[7] N.Q. Khánh, Z. Zolnai, T. Lohner, L. Tóth, L. Dobos, J. Gyulai: Nucl. Inst. and Methods B161-163 (2000) p.424.

[8] W. Fukarek, R.A. Yankov, W. Anwand, V. Heera: Nucl. Instr. and Methods B142 (1998) p.561.

[9] A. Hallén, M.S. Janson, A. Yu. Kuznetsov, D.A. Aberg, M.K. Linnarsson, B.G. Svensson, P.O. Persson, F.H.C. Carlsson, L. Storasta, J.P. Bergman, S.G. Sridhara, Y. Zhang, Nucl. Instr. Methods B186 (2002) p.186.

DOI: https://doi.org/10.1016/s0168-583x(01)00880-1