Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC


Article Preview



Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén






T. Ohshima et al., "Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC", Materials Science Forum, Vols. 433-436, pp. 633-636, 2003

Online since:

September 2003




[1] M. Laube, G. Pensl, H. Itoh, Appl. Phys. Lett. 74 (1999) p.2292.

[2] H. Bracht, N. A. Stolwijk, M. Laube, G. Pensl, Mat. Sci. Forum 353-356 (2001) p.327.

DOI: 10.4028/

[3] U. Gosele, W. Frank, A. Seeger, Appl. Phys. 23 (1980) p.361.

[4] A. van Veen, Appl. Surf. Sci. 85 (1995) p.216.

[5] A. Uedono, T. Ohshima, H. Itoh, R. Suzuki, T. Ohdaira, S. Tanigawa, Y. Aoki, M. Yoshikawa, I. Nashiyama, T. Mikado Jpn. J. Appl. Phys. 67 (1998) p.2422.

DOI: 10.1143/jjap.37.2422

[6] T. Ohshima, A. Uedono, H. Abe, Z. Q. Chen, H. Itoh, M. Yoshikawa, K. Abe, O. Eryu, K. Nakashima, Physica B 308-310 (2001) p.652.

DOI: 10.1016/s0921-4526(01)00780-3

[7] G. Brauer, W. Anwand, P. G. Coleman, A. P. Knights, F. Plazaola, Y. Pacaud, W. Skorupa, J. Stormer, P. Willutzki, Phys. Rev. B 54 (1996) p.3084.

DOI: 10.1103/physrevb.54.3084

[8] L. A. Christal, J. F. Gibbons, J. Appl. Phys. 52 (1981) p.5050.

In order to see related information, you need to Login.