Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC

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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

633-636

DOI:

10.4028/www.scientific.net/MSF.433-436.633

Citation:

T. Ohshima et al., "Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC", Materials Science Forum, Vols. 433-436, pp. 633-636, 2003

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September 2003

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