A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

737-740

DOI:

10.4028/www.scientific.net/MSF.433-436.737

Citation:

J. Eriksson et al., "A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates", Materials Science Forum, Vols. 433-436, pp. 737-740, 2003

Online since:

September 2003

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$35.00

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