Performance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer Layer


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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén




J. Eriksson et al., "Performance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer Layer", Materials Science Forum, Vols. 433-436, pp. 741-744, 2003

Online since:

September 2003





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DOI: 10.4028/

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[3] H.R. Chang, E. Hanna, J. Hacker, R. Hackett and C. Bui, Development and Demonstration of High-Power X-Band SiC MESFETs, Mat. Sci. Forum 389-393, pp.1367-1370, (2002) ICSCRM2001.

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[4] J. Eriksson,N. Rorsman, H. Zirath, A. Henry, B. Magnusson, A. Ellison, E. Janzén, A comparison of MESFET on different 4H-Silicon Carbide Semi-Insulating substrates, This publication.

DOI: 10.4028/

[5] J. Eriksson, Silicon Carbide Microwave Devices, Ph.D. Thesis, Chalmers University of Technology, Sweden, (2002).

[6] R. Jonsson, J. Eriksson, Q. Wahab, S. Rudner, N. Rorsman, H. Zirath, and C. Svensson, Evaluation of SiC MESFET Structures Using Large-Signal TimeDomain Simulations, Mat. Sci. Forum 389-393, pp.1395-1398, (2002) ICSCRM2001.

DOI: 10.4028/

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