Optimisation of a 4H-SiC Enhancement Mode Power JFET

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

777-780

DOI:

10.4028/www.scientific.net/MSF.433-436.777

Citation:

A. B. Horsfall et al., "Optimisation of a 4H-SiC Enhancement Mode Power JFET", Materials Science Forum, Vols. 433-436, pp. 777-780, 2003

Online since:

September 2003

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.