SiC Power Devices on QUASIC and SiCOI Smart-Cut® Substrates: First Demonstrations


Article Preview



Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén




F. Letertre et al., "SiC Power Devices on QUASIC and SiCOI Smart-Cut® Substrates: First Demonstrations", Materials Science Forum, Vols. 433-436, pp. 813-818, 2003

Online since:

September 2003




[1] E. Hugonnard, F. Letertre, L. Di Cioccio, H.J. von Bardeleben, J. L Cantin, T. Ouisse, T. Billon, G. Guillot, Materials Science Forum Vols. 338-342 (2000) pp.715-718.


[2] F. Letertre and al. QUASIC Smart-Cut® substrates for high power devices, Materials Science Forum Vols. 289-393 (2002) pp.151-154.

[3] Defives D. et al, Barrier Inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers, IEEE T-ED, 1999, vol 46, n°3, pp.449-455.


[4] E. Arnold, Silicon On Insulator devices for high voltage and power IC applications, The Electrochemical Society proceedings, Semiconductor Wafer Bonding, vol. 93-29, pp.161-175.

[5] Ruff Martin, SiC Devices: Physics and Numerical simulation, IEEE T-ED, 1994, Vol 41, N°6, pp.1040-1054.

[6] Konstantinov AO, Ionisation rates and critical fields in 4H silicon carbide, Appl. Phys. Lett, 1997, Vol 71, N°1, pp.90-92. Figure 9: reverse plots of a diode with the substrate contact to anode or cathode.

Fetching data from Crossref.
This may take some time to load.