Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base


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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén




P. A. Ivanov et al., "Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base", Materials Science Forum, Vols. 433-436, pp. 855-858, 2003

Online since:

September 2003




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