Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

855-858

DOI:

10.4028/www.scientific.net/MSF.433-436.855

Citation:

P. A. Ivanov et al., "Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base", Materials Science Forum, Vols. 433-436, pp. 855-858, 2003

Online since:

September 2003

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$35.00

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