Fabrication and Characterisation of High-Voltage SiC-Thyristors

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

883-886

Citation:

V. Zorngiebel et al., "Fabrication and Characterisation of High-Voltage SiC-Thyristors", Materials Science Forum, Vols. 433-436, pp. 883-886, 2003

Online since:

September 2003

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[1] Chow, T. P., V. Khemka, et al. (2000). SiC and GaN bipolar power devices., Solid-State Electronics 44: 277-301.

DOI: https://doi.org/10.1016/s0038-1101(99)00235-x

[2] N. Arssi, M. L. Locatelli, D. Planson, J. -P. Chante, V. Zorngiebel, E. Spahn, and S. Scharnholz, Study based on the Numerical Simulation of a 5 kV Asymmetrical 4H-SiC Thyristor for High Power Pulses Application, presented at Int. Semiconductor Conference (CAS), Sinaia, Roummania, 2001: 341-344.

DOI: https://doi.org/10.1109/smicnd.2001.967479

[3] S. Scharnholz, V. Brommer, G. Buderer, and E. Spahn; High-Power MOSFETs and FastSwitching Thyristors Utilized as Opening Switches for Inductive Storage Systems,; accepted for publication in IEEE Trans. on Magnetics; to be presented at the 11th EML Symposium, SaintLouis, France, (2002).

DOI: https://doi.org/10.1109/tmag.2002.806395

[4] Spahn, E.; Sterzelmeier, K.; Brommer, V.; Sinninger, L.; Grasser, B.; Modular Pulsed Power Supply Units for active Protection Systems,; presented at the Int. Conf. on Pulsed Power Applications (PPA) 27. -29. 03, Gelsenkirchen, Germany; (2001).

DOI: https://doi.org/10.1109/elt.2008.13

[5] Scharnholz S., Hellmund O., Stein J., Spangenberg B., and Kurz H, Utilization of RPECVD oxide in U-MOS structures and different MOSFETs on SiC, Material Science Forum Vols. 353 -356 (Proc. 3ed ECSCRM 2001), 651 - 654.

DOI: https://doi.org/10.4028/www.scientific.net/msf.353-356.651

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