In Situ Studies of Structural Instability in Operating 4H-SiC PiN Diodes

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

933-936

DOI:

10.4028/www.scientific.net/MSF.433-436.933

Citation:

A. Galeckas et al., "In Situ Studies of Structural Instability in Operating 4H-SiC PiN Diodes", Materials Science Forum, Vols. 433-436, pp. 933-936, 2003

Online since:

September 2003

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$35.00

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