Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth


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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén




R. Drachev et al., "Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth", Materials Science Forum, Vols. 433-436, pp. 99-102, 2003

Online since:

September 2003




[1] D. Hofmann, E. Schmitt, M. Bickermann, M. Kolbl, P. J. Wellmann, A. Winnacker, Material Science and Engineering B61-62 (1999) 48.

[2] R.V. Drachev, G.D. Straty, D. I. Cherednichenko, I.I. Khlebnikov and T.S. Sudarshan, J. Cryst. Growth 233 (2001) 541.

[3] M. Pons, E. Blanquet, J.M. Dedulle, I. Garcon, R. Madar and C. Bernard, J. Electrochem. Soc. Vol. 143, No. 11, 3727-3735 (1996).

[4] R.H. Ma, Q.S. Chen, H. Zhang, V. Prasad, C.M. Balkas, N. K0 Yushin, J. of Crystal Growth 211 (2000) 352.

[5] I. I. Parfenova, Yu. M. Tairov, V. F. Tsvetkov, Sov. Phys. Semicond. 24(2) (1990) 158.

[6] St G. Müller, J. Fricke, D. Hofmann, R. Horn, O. Nilsson, B. Rexer, Material Science Forum 338-342 (2000) 43.

[7] R.V. Drachev, Ph.D. Theses Modeling of Defect Formation in SiC during PVT Growth, University of South Carolina, (2002).

[8] D. Hofmann, R. Eckstein, L. Kadinski, M. Kölbl, M. Müller, St. G. Müller, E. Schmitt, A. Weber, A. Winnacker, Mat. Res. Soc. Symp. Proc. 483 (1998) 301.

[9] K. Lilov, Materials Science and Engineering, B21 65-69 (1993).

[10] Q. S. Chen, H. Zhang, V. Prasal, J. of Crystal Growth 230 (2001) 239.

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