Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

991-994

DOI:

10.4028/www.scientific.net/MSF.433-436.991

Citation:

A. Kakanakova-Georgieva et al., "Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC", Materials Science Forum, Vols. 433-436, pp. 991-994, 2003

Online since:

September 2003

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$35.00

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