Silicon Carbide and Related Materials - 2002

Silicon Carbide and Related Materials - 2002

Description:

Volume is indexed by Thomson Reuters CPCI-S (WoS).
Wide-bandgap semiconductors such as SiC, III-V nitrides and related compounds are attracting rapidly increasing attention due to their other, very interesting, physical properties which are often superior in many ways to those of conventional semiconductors. Steady improvements in crystal quality, and improved knowledge concerning their physical properties, are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue-light emitters.

Keywords:
This book comprises the proceedings of the fourth European Conference on Silicon Carbide and Related Materials, held on the 1 to 5 September 2002 in Linköping, Sweden. This conference series continued its tradition of being the main forum for presenting results, and discussing progress, among university and industry researchers who are active in the fields of SiC and related materials. These proceedings therefore document the latest experimental and theoretical understanding of the growth of bulk and epitaxial layers, the properties of the resultant material, the development of suitable processes and of electronic devices that can exploit and benefit best from the outstanding physical properties offered by wide-bandgap materials.

Info:

ISBN-13:
978-0-87849-920-5
Editors:
Peder Bergman and Erik Janzén
Pages:
1036
Year:
2003
Edition:
hardcover

Buy this volume:

Print

978-0-87849-920-5

not available
$505.00

CD

978-3-03859-922-7

$505.00

CD+Print*

978-0-87849-920-5

not available
$707.00

eBook**

978-3-0357-0606-2

$505.00

eBook+Print*

978-0-87849-920-5

not available
$707.00

*If you buy CD+Print or eBook+Print, you save 30%

**See an example