Effect of Short-Term Annealing on the Crystalline Structure of Metallic Multilayers with a TiB2 Anti-Diffusion Layer on GaAs Substrate


Article Preview

The structural characteristics of Au-TiB 2/GaAs and Au-Mo-TiB2-AuGe/GaAs device structures after deposition and short-term thermal annealing (STTA) were investigated. The multilayer contacts with TiB2 anti-diffusion layer were magnetron sputtered on (001) GaAs substrates. The structures were STTA in a stream of hydrogen at temperatures of 400°C, 600°C, and 800°C during 60 seconds. The X-ray diffraction techniques and atomic force microscopy were used for investigation. At STTA a reduction of residual strain in multilayer metallic films, an increment of film grain size, a change of grains preferred orientation in the Au polycrystalline film and a transformation of surface morphology of the upper Au film were observed. These processes do not have monotonic temperature dependence. For Au-TiB2/GaAs a minimum value of residual strains was observed at T=600°C while for Au-Mo-TiB2-AuGe/GaAs it was observed at T=400°C. The roughness of Au film monotonically increased at annealing of Au-TiB2/GaAs structure at T=400°C and T=600°C and corresponded to the initial value at T=800°C. A strong change of Au film roughness was observed at annealing of Au-Mo-TiB2-AuGe/GaAs structure at T=600°C. The XRD pattern from a Au-TiB2 metal film denoted a quasi-amorphous structure in the initial state and an increment of micrograins size at STTA. In the initial state the crystalline structure of Au film in Au-Mo-TiB2-AuGe/GaAs structure had some preferred orientation in the <111> direction, which was reduced after STTA at T=600°C. The polycrystalline structure of Au film was partially deteriorated after STTA at T=800°C as TiB2 layer was destroyed and lost its diffusion protecting properties.



Materials Science Forum (Volumes 443-444)

Edited by:

Yvonne Andersson, Eric J. Mittemeijer and Udo Welzel




T.G. Kryshtab, "Effect of Short-Term Annealing on the Crystalline Structure of Metallic Multilayers with a TiB2 Anti-Diffusion Layer on GaAs Substrate", Materials Science Forum, Vols. 443-444, pp. 205-210, 2004

Online since:

January 2004





[1] C.C. Wang, S.A. Akbar, W. Chen and V.D. Patton: J. Mater. Sci. Vol. 30 (1995), p.1627.

[2] R. Weidemann, H. Oettel and M. Jerenz: Surf. Coat. Technol. Vol. 97 (1-3) (1997), p.313.

[3] T.G. Kryshtab, J. Palacios Gomez, P.M. Lytvyn and O.S. Lytvyn: Thin Solid Films Vol. 373 (2000), p.79.

DOI: https://doi.org/10.1016/s0040-6090(00)01099-3

[4] N.L. Dmitruk, I.B. Ermolovich, R.V. Konakova et. al.: Appl. Surf. Sci. Vol. 166 (2000), p.520.

[5] C. McHatton and C.M. Gumbert: Solid State Technol. November (1998), p.85.

[6] K. Godwod, A.T. Nagy and Z. Rek: Phys. Status Solidi (A) Vol. 34 (2) (1976), p.705.

[7] M. Aguilar, A.I. Oliva, P. Quintana and J.L. Peña: Surface Science Vol. 380 (1997), p.91.

[8] T. Yong, J. Chang and H. Ueng: Thin Solid Films Vol. 322 (1998), p.319.

[9] D. Sood, S. Mukherjee and M. Katselis: Surf. Coat. Technol. Vol. 103-104 (1998), p.304.