Identities of the Deep Level Defects E1/E2 in 6H Silicon Carbide


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Materials Science Forum (Volumes 445-446)

Edited by:

Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito




C.C. Ling et al., "Identities of the Deep Level Defects E1/E2 in 6H Silicon Carbide", Materials Science Forum, Vols. 445-446, pp. 135-137, 2004

Online since:

January 2004




[10] In the electron irradiation process, the maximum energy that the electron transfers to the C-atom at the C sublattice site is larger than that transferred to the Si-atom at the Si sublattice because the C-atom is lighter than the Si-atom. The threshold energies for displacing the C- and the Si- atoms were reported to be about 0. 2MeV and 0. 4MeV respectively.

[10] With positron annihilation studies on electron irradiated n-type 6H-SiC, Rempel et al.

[1] have reported that no vacancy was induced with Ee=0. 23MeV, C vacancy was induced with Ee=0. 3MeV, and VSi was created with Ee=0. 5MeV. It is thus plausible to explain the present DLTS data based on the consideration of defect created by atomic displacement in the SiC lattice in the electron irradiation process. With Ee=0. 2MeV, the energy transferred to the C-atom and the Si-atom is insufficient to displace them from their sublattice sites. With Ee=0. 3MeV, the deep levels ED1, E1/E2 and Ei are created. This corresponds to the defect generated by the displacement of the C-atom from the sublattice site as displacing the C-atom requires a lower threshold energy than that of the Si-atom. Further increasing the energy to 1. 7MeV causes defects induced by displacing the Si-atom, which has threshold energy higher than the C-atom. Z1/Z2 fall into this category and it also coincides with the model that Z1/Z2 are isolated VSi [4, 5]. As the irradiation energy Ee=0. 3MeV is the energy that barely exceeds the threshold energy of displacing the C-atom, the displaced C-atom is not likely to have sufficient energy to induce further defects. It implies the deep levels E1/E2, as well as ED1 and Ei, have microstructures of the carbon vacancy or the carbon interstitial. Conclusion We have performed defect studies in 6H-SiC with the use of positron lifetime spectroscopy and DLTS. We come to a conclusion that the deep levels E1/E2 does not have microstructure related to the VSi complex nor the VCVSi divacancy, but indeed contains the carbon vacancy or the carbon interstitial. ACKNOWLEDGEMENT This project is financially supported by the RGC, HKSAR (project nos. HKU7085/01P, HKU7103/02P and HKU1/00C) and the Grant of National Nature Science of China (No. 60076010), and the CRCG, HKU. XD Chen would also like to thank for the postdoctoral fellowship offered by The University of Hong Kong. Reference.

DOI: 10.1007/bf02407053

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