Identities of the Deep Level Defects E1/E2 in 6H Silicon Carbide

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Periodical:

Materials Science Forum (Volumes 445-446)

Edited by:

Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito

Pages:

135-137

DOI:

10.4028/www.scientific.net/MSF.445-446.135

Citation:

C.C. Ling et al., "Identities of the Deep Level Defects E1/E2 in 6H Silicon Carbide", Materials Science Forum, Vols. 445-446, pp. 135-137, 2004

Online since:

January 2004

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$35.00

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