Positron Beam Study of Defects Induced in Ar-Implanted Si


Article Preview



Materials Science Forum (Volumes 445-446)

Edited by:

Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito




T. Miyagoe et al., "Positron Beam Study of Defects Induced in Ar-Implanted Si", Materials Science Forum, Vols. 445-446, pp. 150-152, 2004

Online since:

January 2004




[1] R. Krause-Rehberg, H.S. Leipner: Positron Annihilation in Semiconductors (Springer, Berlin, 1998).

[2] M. Hasegawa, Z. Tang, Y. Nagai, T. Nonaka, K. Nakamura, Appl. Surf. Sci. 194, (2002), p.76.

[3] S. Hahn, T. Hara, T. Mekawa, N. Satoh, Y. -K. Kwon, K. -I. Kim, Y. -H. Bae, W. -J Chung, E.K. McIntyre, W.L. Smith, L. Larson, R. Meinecke, Nucl. Instrum. Methods Phys. Res. B 74, (1993), p.275.

[4] M. Fujinami, A. Tsuge, K. Tanaka, J. Appl. Phys. 79, (1996), p.9017.

[5] M. Fujinami, T. Sawada, T. Akahane, Mater. Sci. Forum 363-365, (2001), p.52.

[6] R. Suzuki, Y. Kobayashi, T. Mikado, H. Ohgaki, M. Chiwaki, T. Yamazaki, T. Tomimasu, Jpn. J. Appl. Phys., Pt. 1 30, (1991), p. L532.

DOI: 10.1143/jjap.30.l532

[7] P. Kirkegaard, M. Eldrup, O.E. Mogensen, N.J. Pedersen, Comput. Phys. Commun. 23, (1981), p.307.

[8] A. Kawasuso, M. Hasegawa, M. Suezawa, S. Yamaguchi, K. Sumino, Mater. Sci. Forum 175-178, (1995), p.423.

[9] A. van Veen, H. Schut, J. de Vries, R.A. Hakvoort, M.R. IJpma, in Positron Beams for Solids and Surfaces, eds. P.J. Schultz, G.R. Massoumi, P.J. Simpson, AIP Conf. Proc. No. 218 (AIP, New York, 1990), p.171.

[10] M. Fujinami, N.B. Chilton, J. Appl. Phys. 73, (1993), p.3242.

[11] K. -I. Kim, H. Kuwano, Y. -K. Kwon, S. -K. Hahn, Jpn. J. Appl. Phys., Pt. 1 33, (1994).

Fetching data from Crossref.
This may take some time to load.