Native Defects in n-type Sn-Doped GaAs Using Positron Annihilation Technique

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Periodical:

Materials Science Forum (Volumes 445-446)

Edited by:

Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito

Pages:

174-176

Citation:

A. Saha et al., "Native Defects in n-type Sn-Doped GaAs Using Positron Annihilation Technique", Materials Science Forum, Vols. 445-446, pp. 174-176, 2004

Online since:

January 2004

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[4] C. Corbel: Mater. Sec. Forum, Vol. 105-110 (1992) , p.221.

[5] J. Gebauer, R. Krause-Rehberg, C. Domke, Ph. Ebert and K. Urban, Phy. Rev. Lett., 78 (1997), p.3334.

[6] ] G. Dlubek, R . Krause, Phys. Stat. Sol (a) 102 (1987), p.443 I2 vs. Ann. Temp. for fixed ���� 2(=295 ps. ).

[55] [60] [65] [70] [75] 0 200 400 600 Annealing temperature (°C) Intensity, I2 (%).