Comparison of Vacancy Creation by Nuclear and Electronic Processes in Silicon Irradiated with Swift Kr and Bi Ions

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Periodical:

Materials Science Forum (Volumes 445-446)

Edited by:

Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito

Pages:

93-95

DOI:

10.4028/www.scientific.net/MSF.445-446.93

Citation:

P. M. Gordo et al., "Comparison of Vacancy Creation by Nuclear and Electronic Processes in Silicon Irradiated with Swift Kr and Bi Ions", Materials Science Forum, Vols. 445-446, pp. 93-95, 2004

Online since:

January 2004

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$35.00

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