Characteristics of HfO2 Dielectric Layer Grown by MOMBE


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The chemical and electrical characteristics of HfO2 dielectric layers grown on the p-type Si substrate by the metalorganic molecular beam epitaxy (MOMBE) technique were investigated. The XPS spectra showed that the Hf 4f and O 1s peaks shifted to the higher level of binding energy due to the charge 1transfer effect. Electrical properties were analyzed by C-V and I-V measurements. The distortion of C-V curve at depletion region is attributed to the effect of deep trap levels’ existence. Saturation capacitance and leakage current density were in the range of 207 ~ 249 pF and 0.52 ~ 0.58 A/cm2 respectively, and the flat band voltage shift to the higher voltage appeared as the oxygen flow rate increased.



Materials Science Forum (Volumes 449-452)

Edited by:

S.-G. Kang and T. Kobayashi




J.H. Hong and J. M. Myoung, "Characteristics of HfO2 Dielectric Layer Grown by MOMBE", Materials Science Forum, Vols. 449-452, pp. 1005-1008, 2004

Online since:

March 2004





[1] M. Balog, M. Schieber, M. Michiman, and S. Patai: Thin Solid Films Vol. 41 (1977), p.247.

[2] G. D. Wilk, R. M. Wallace, and J. M. Anthony: J. Appl. Phys. Vol. 89 (2001), p.5243.

[3] G. B. Stringfellow: Organometallic Vapor-Phase Epitaxy: Theory and Practice, 2 nd ed. (Academic Press, USA 1999).

[4] P. S. Bagus, F. Illas, G. Pacchioni, and F. Parmigiani: J. Electron Spectrosc. Relat. Phenom. Vol. 100 (1999), p.215.

[5] M. J. Guittet, J. P. Crocombette, and M. Gautier-Soyer: Phys. Rev. B Vol. 63 (2001), p.125117.

[6] H. Y. Yu, X. D. Feng, D. Grozea, Z. H. Lu, R. N. S. Sodhi, A. -M. Hor, and H. Aziz: Appl. Phys. Lett. Vol. 78 (2001), p.2595.

[7] J. P. Chang, and Y-S Lin: J. Appl. Phys. Vol. 90 (2001), p.2964.

[8] K. Kukli, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskela: Thin Solid Films Vol. 416 (2002), p.72.

[9] B. H. Lee, L. Kang, R. Nieh, W. -J. Qi, and J. C. Lee: Appl. Phys. Lett. Vol. 76 (2000), p. (1926).

[10] R. S. Johnson, J. G. Hong, and G. Lucovsky: J. Vac. Sci. Technol. B Vol. 19 (2001), p.1606.

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