Characteristics of HfO2 Dielectric Layer Grown by MOMBE

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The chemical and electrical characteristics of HfO2 dielectric layers grown on the p-type Si substrate by the metalorganic molecular beam epitaxy (MOMBE) technique were investigated. The XPS spectra showed that the Hf 4f and O 1s peaks shifted to the higher level of binding energy due to the charge 1transfer effect. Electrical properties were analyzed by C-V and I-V measurements. The distortion of C-V curve at depletion region is attributed to the effect of deep trap levels’ existence. Saturation capacitance and leakage current density were in the range of 207 ~ 249 pF and 0.52 ~ 0.58 A/cm2 respectively, and the flat band voltage shift to the higher voltage appeared as the oxygen flow rate increased.

Info:

Periodical:

Materials Science Forum (Volumes 449-452)

Edited by:

S.-G. Kang and T. Kobayashi

Pages:

1005-1008

DOI:

10.4028/www.scientific.net/MSF.449-452.1005

Citation:

J.H. Hong and J. M. Myoung, "Characteristics of HfO2 Dielectric Layer Grown by MOMBE", Materials Science Forum, Vols. 449-452, pp. 1005-1008, 2004

Online since:

March 2004

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$35.00

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