Structure Dependent Oxidation of Al Thin Films for MTJ Tunnel Barrier
Magnetic tunnel junctions(MTJ) are fabricated as a function of the input power of Al thin film. Al thin films have pseudo-crystalline structure at 30, 60, 90 W and transform into amorphous like smooth nanocrystalline state at 120 W. Junction resistance increases as the annealing temperature increases up to 250 and decrease at 300 at the pseudo-crystalline barrier. When the barrier has amorphous like nanocrystalline structure, optimum annealing temperature increases up to 300 . The barrier characteristics are strongly related with the microstructure of AlOx barrier.
S.-G. Kang and T. Kobayashi
Y.W. Lee et al., "Structure Dependent Oxidation of Al Thin Films for MTJ Tunnel Barrier", Materials Science Forum, Vols. 449-452, pp. 1053-1056, 2004