Comparison of III- Nitride Nanotubes: Atomistic Simulations

Abstract:

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We have investigated the single-wall boron-, aluminum- and gallium-nitride nanotubes using atomistic simulations based on the Tersoff potential. The Tersoff potential for III-nitride effectively describes the properties of III-nitride nanotubes. Structures, energetic and nanomechanics of III-nitride nanotubes were investigated and compared with each other. Young’s moduli of III-N nanotubes were lower than that of CNT. Though the graphite-like sheet formation of AlN was very difficult, since the elastic energy per atom to curve the sheet into cylinder for AlN was very low, if graphite-like sheets of AlN were formed, the extra cost to produce the tubes would be very low

Info:

Periodical:

Materials Science Forum (Volumes 449-452)

Edited by:

S.-G. Kang and T. Kobayashi

Pages:

1185-1188

DOI:

10.4028/www.scientific.net/MSF.449-452.1185

Citation:

J. W. Kang and H. J. Hwang, "Comparison of III- Nitride Nanotubes: Atomistic Simulations", Materials Science Forum, Vols. 449-452, pp. 1185-1188, 2004

Online since:

March 2004

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$35.00

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