Dry Oxidation Behavior of Epitaxial Si0.7Ge0.3 Films


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We have investigated the oxidation behavior of epi-Si0.7Ge0.3 films in dry oxygen ambient. Epi- Si0.7Ge0.3 films about 500Å in thickness were deposited on (100) Si wafers by UHV-CVD system. Oxidation was carried out in a conventional tube furnace at 800 °C . In this study, it was found that Ge piles up at the oxide/substrate interface, forming a Ge-rich layer. Because of the large difference in the heat of formation between SiO2(-730.4KJ/mol at 1000K) and GeO2(-387.07 at 1000K) [1], the Si is to be more reactive than Ge to oxygen. The oxidation rate of SiGe in a dry oxygen environment is found to be essentially the same as that of pure Si.



Materials Science Forum (Volumes 449-452)

Edited by:

S.-G. Kang and T. Kobayashi




H.B. Kang et al., "Dry Oxidation Behavior of Epitaxial Si0.7Ge0.3 Films", Materials Science Forum, Vols. 449-452, pp. 361-364, 2004

Online since:

March 2004




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