Microstructure and Chemical Properties of c-BN Films Prepared by ME-ARE

Abstract:

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c-BN film was synthesized using ME-ARE on Si substrate. The deposition process was optimized via the Taguchi method. The optimized conditions were as follows: substrate temperature, anode (plasma) current, Ar/N2 ratio, pulse frequency, duty frequency, bias voltage and deposition time were 500°C, 15A, 3, 1 kHz, 50%, -130V and 15 min, respectively. The crosssectional TEM observation revealed that the c-BN films with a thickness of 100nm ~300nm were composed of two layers, a columnar h-BN layer with a thickness of 30nm~40 nm normal to Si substrate and a c-BN structure.

Info:

Periodical:

Materials Science Forum (Volumes 449-452)

Edited by:

S.-G. Kang and T. Kobayashi

Pages:

465-468

DOI:

10.4028/www.scientific.net/MSF.449-452.465

Citation:

Y. S. Song et al., "Microstructure and Chemical Properties of c-BN Films Prepared by ME-ARE", Materials Science Forum, Vols. 449-452, pp. 465-468, 2004

Online since:

March 2004

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Price:

$35.00

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