Microstructure and Chemical Properties of c-BN Films Prepared by ME-ARE

Abstract:

Article Preview

c-BN film was synthesized using ME-ARE on Si substrate. The deposition process was optimized via the Taguchi method. The optimized conditions were as follows: substrate temperature, anode (plasma) current, Ar/N2 ratio, pulse frequency, duty frequency, bias voltage and deposition time were 500°C, 15A, 3, 1 kHz, 50%, -130V and 15 min, respectively. The crosssectional TEM observation revealed that the c-BN films with a thickness of 100nm ~300nm were composed of two layers, a columnar h-BN layer with a thickness of 30nm~40 nm normal to Si substrate and a c-BN structure.

Info:

Periodical:

Materials Science Forum (Volumes 449-452)

Edited by:

S.-G. Kang and T. Kobayashi

Pages:

465-468

Citation:

Y. S. Song et al., "Microstructure and Chemical Properties of c-BN Films Prepared by ME-ARE", Materials Science Forum, Vols. 449-452, pp. 465-468, 2004

Online since:

March 2004

Export:

Price:

$38.00

[1] T. Ikeda, Y. Kawate and Y. Hirai: J. Vac. Sci. Technol. A Vol. 8 (1990), p.3168.

[2] S. Jager, K. Bewilogua and C.P. Kalges: Thin Solid Films Vol. 245 (1994), p.50 Journal Title and Volume Number (to be inserted by the publisher).

[3] D.J. Kester, K.S. Alley, D.J. Lichtenwalner and R.F. Davis: J. Vac. Sci. Technol. A Vol. 12 (1994), p.3074.

[4] K. Nakamura, K. Inagawa, K. Tsuruok and S. Komiya: Thin Solid Films Vol. 40 (1977), p.155.

[5] B.A. Philthorpe and P. Mahon: Thin Solid Films Vol. 193/194 (1990), p.34.

Fetching data from Crossref.
This may take some time to load.