Epitaxial Growth of Mn-Doped ZnO Thin Films on Al2O3 (0001)

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Growth behavior of Mn-doped ZnO thin films (Zn1-xMnxO) onAl2O3 (0001) substrates by pulsed laser deposition was investigated as a function of Mn content (0.00≤x≤0.35) mainly using synchrotron x-ray diffraction. We found that a small amount of Mn doping (x=0.05) significantly improves the crystalline quality, and also leads to a singly oriented film. The superior epitaxial growth of the film with an optimum Mn content seems to be associated with its microstructural evolution.

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Periodical:

Materials Science Forum (Volumes 449-452)

Edited by:

S.-G. Kang and T. Kobayashi

Pages:

493-496

Citation:

V. Vaithianathan et al., "Epitaxial Growth of Mn-Doped ZnO Thin Films on Al2O3 (0001)", Materials Science Forum, Vols. 449-452, pp. 493-496, 2004

Online since:

March 2004

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$38.00

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