Alternating Magnetic Field Crystallization of Amorphous Si Films

Abstract:

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We propose a new method for lower process temperature and shorter process time of SPC. This method involves the induction of high frequency alternating magnetic field during crystallization annealing, referring this process as Alternating Magnetic Field Crystallization, AMFC. The processed films were characterized using UV spectroscopy to determine the incubation time, Raman spectroscopy for the degree of crystallization. We found that the kinetics of crystallization was greatly enhanced by alternating magnetic field. When we crystallized, in the case of SPC, annealing time is over 14 hours at 570°C. But in the case of AMFC, annealing time is only 20minutes at the same temperature.

Info:

Periodical:

Materials Science Forum (Volumes 449-452)

Edited by:

S.-G. Kang and T. Kobayashi

Pages:

513-516

DOI:

10.4028/www.scientific.net/MSF.449-452.513

Citation:

K. H. Kang et al., "Alternating Magnetic Field Crystallization of Amorphous Si Films", Materials Science Forum, Vols. 449-452, pp. 513-516, 2004

Online since:

March 2004

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Price:

$35.00

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